Katalóg evidencie publikačnej činnosti PU


ID záznamu:PU.Prešov.2013021514005279
Kategória:AFC
Autor:Iľkovič Sergej (13%)
Autor:Reiffers Marián (13%)
Autor:Šebeň Vladimír (12%)
Autor:Šterbáková Katarína (12%)
Autor:Burger Vladimír (10%)
Autor:Parma Ludvík (10%)
Autor:Chobal O. (15%)
Autor:Rizak I. (15%)
Názov:Heat capacity and electrical resistance of (PbySn1-y)2P2S6 chalcogenides [print]
Zdroj:Journal of Physics [print, elektronický dokument] : conference series
Lokácia:Roč. 400, č. 32100. - Bristol : IOP Publishing, (2012), s. 1-4
ISSN:1742-6588. - ISSN 1742-6596
URL:http://iopscience.iop.org/1742-6596/Y2012
Ohlas:[1] 2015. SHVALYA, V., OLEAGA, A., SALAZAR, A. et al. Thermal diffusivity and 3D-XY critical behavior of ferroelectric semiconductors (PbxSn1-x)2P2Se6. In Journal of physics and chemistry of solids, ISSN 0022-3697. 2015, Vol. 88, s. 78-84.
Ohlas:[1] 2017. OLEAGA, A., SHVALYA, V., SALAZAR, A. et al. In search of a tricritical Lifshitz point in Sn2P2(S1-xSex)6 doped with Pb, Ge: A critical behavior study. In Journal of alloys and compounds, ISSN 0925-8388. 2017, vol. 694, s. 800-814.